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| 2N6798 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . * V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 * ID = 5.5A W * RDSON = 0.40W 45 TO-39 METAL PACKAGE Underside View PIN 1 - Source PIN 2 - Gate PIN 3 - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS VGS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous TC = 25C TC = 100C Drain Current Pulsed IDM IA Avalanche Current PD Total Device Dissipation @ TC = 25C TC = 100C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case RqJC Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.5mm from Case for 10 secs. 200V 20V 5.5A 3.5A 22A 3.1A 25W 10W -55 to +150C 5.0CW 175CW 300C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 2N6798 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter V(BR)DSS VGS(th) IGSS ID(on) IDSS rDS(on) gfs Ciss Coss Crss tdon tr td(of) tf VSD IS ISM trr Qrr Drain-Source Breakdown Voltage Gate Thresshold Voltage Gate-Body Leakage On-State Drain Current 1 Test Conditions VGS = 0 VDS=VGS VDS = 0 VDS = 2.2 VGS = 0 VGS = 10V VDS = 5V VDS = 25V ID = 1000mA ID = 250mA VGS = 20V VGS = 10V Tj = 125C ID = 3.5A ID = 3.5A VGS = 0 Min. 200 2.0 5.5 Typ. Max. Unit 4.0 100 25 250 V nA A Zero Gate Voltage Drain Current Drain-Source On-Resistance1 Forward Transconductance1 Input Capacitance Output capacitance Reverse Transfer Capacitance Turn-On Delay Time RiseTime Turn off Delay Time FallTime VDS =0.8 x V(BR)DSS 0.25 2.5 3.0 600 250 80 8 42 12 30 IF = IS VGS = 0 mA W s(E) pF 4.0 f = 1.0MHZ VDD = 77V ID = 3.5A RL = 22W VGEN = 10V 30 50 50 40 1.4 5.5 22 V A ns ns RG = 7.5 ohms SOURCE DRAIN DIODE RATING CHARACTERISTICS Diode Forward Voltage1 Continues Current Pulsed Current2 IF = IS dIF/DT = 100A/mS 150 Reverse Recovery Time Reverse Recovered Charge 500 6 mC 1) Pulse test : Pulse Width < 300ms ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 |
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